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2SK2663-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2663-VB is a single N-channel MOSFET in TO252 package. The device adopts SJ_Multi-EPI technology, with high drain-source voltage (VDS) and stable performance characteristics. It is suitable for electronic applications requiring higher voltage and low power. Its drain-source voltage is 900V, gate-source voltage (VGS) is 30V (±), and threshold voltage (Vth) is 3.5V. The drain-source on-resistance (RDS(ON)) is 2700mΩ@VGS=10V, and the maximum drain current (ID) is 2A.
2SK2663-VB is a single N-channel MOSFET in TO252 package. The device adopts SJ_Multi-EPI technology, with high drain-source voltage (VDS) and stable performance characteristics. It is suitable for electronic applications requiring higher voltage and low power. Its drain-source voltage is 900V, gate-source voltage (VGS) is 30V (±), and threshold voltage (Vth) is 3.5V. The drain-source on-resistance (RDS(ON)) is 2700mΩ@VGS=10V, and the maximum drain current (ID) is 2A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2663-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Fields and Modules
2SK2663-VB MOSFET is suitable for electronic applications that require higher voltage and low power, such as:
1. **Power Inverter**: In applications that require high voltage inversion and stable performance, this MOSFET can provide reliable switching characteristics and is suitable for solar inverters, power inverters and other fields.
2. **Lighting Application**: Used in lighting applications such as LED lighting drivers, it can provide reliable power switching and stable performance.
3. **Power Management**: Used in power management applications such as switching power supplies and DC-DC converters, it can provide efficient power conversion and stable performance.
4. **Industrial Control**: Suitable for industrial control systems that require high voltage switching and stable performance, such as high voltage motor drives, sensor control and other fields.
Through these application examples, it can be seen that 2SK2663-VB MOSFET has a wide range of application prospects in electronic applications that require higher voltage and low power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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