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2SK2601-VB Product details
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### 2SK2601-VB MOSFET Product Introduction
2SK2601-VB is a single N-channel MOSFET manufactured by VBsemi in TO3P package. The device is suitable for high power applications, with high drain-source voltage (VDS 600V) and moderate current carrying capacity (ID 11A). It adopts multi-epitaxial structure (SJ_Multi-EPI) technology, with low on-resistance and moderate threshold voltage, suitable for circuit design requiring high power, high efficiency and reliability.
2SK2601-VB is a single N-channel MOSFET manufactured by VBsemi in TO3P package. The device is suitable for high power applications, with high drain-source voltage (VDS 600V) and moderate current carrying capacity (ID 11A). It adopts multi-epitaxial structure (SJ_Multi-EPI) technology, with low on-resistance and moderate threshold voltage, suitable for circuit design requiring high power, high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2SK2601-VB Detailed parameter description
- **Model**: 2SK2601-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: Multi-epitaxial structure (SJ_Multi-EPI)
- **Model**: 2SK2601-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: Multi-epitaxial structure (SJ_Multi-EPI)
Domain and module applications：
### Application Fields and Module Examples
1. **Power Modules**:
2SK2601-VB can be used in high-power power modules as a switching element to help control the power output. Its high current carrying capacity and low on-resistance make it an ideal choice for power module design.
2. **Industrial Drives**:
In industrial drives, this MOSFET can be used for motor control and other high-power modules. Its high reliability and voltage resistance make it an excellent performer in industrial drives.
3. **Solar Inverters**:
In solar inverters, 2SK2601-VB can be used in high-power switching circuits to help improve the inverter's conversion efficiency and stability. Its voltage resistance and low on-resistance characteristics make it an ideal choice for inverter design.
4. **Electric Vehicle Charging Stations**:
In electric vehicle charging stations, this MOSFET can be used to control charging current and switch power supply with high efficiency and stability. Its voltage resistance and durability make it excellent in charging station design.
The above are typical application scenarios of 2SK2601-VB in high-power applications. Its characteristics make it an ideal choice for a variety of circuit designs, and can meet the application requirements with high power, efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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