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2SK2599_06-VB Product details
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### Product Introduction
2SK2599_06-VB is a high voltage, single N-channel MOSFET in TO220F package. It is designed with Plannar technology, has good switching performance and high voltage tolerance, and is suitable for high voltage application scenarios. With a drain-source voltage (VDS) of 650V, this MOSFET can provide reliable conduction performance at higher voltages. Its maximum drain current (ID) is 4A, the gate-source voltage (VGS) is 30V (±), and the threshold voltage (Vth) is 3.5V.
2SK2599_06-VB is a high voltage, single N-channel MOSFET in TO220F package. It is designed with Plannar technology, has good switching performance and high voltage tolerance, and is suitable for high voltage application scenarios. With a drain-source voltage (VDS) of 650V, this MOSFET can provide reliable conduction performance at higher voltages. Its maximum drain current (ID) is 4A, the gate-source voltage (VGS) is 30V (±), and the threshold voltage (Vth) is 3.5V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2599_06-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Drain current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications：
### Applications and modules
2SK2599_06-VB MOSFET is suitable for medium power and high voltage applications, such as:
1. **Power inverter**: In applications requiring medium power and high voltage inversion, this MOSFET can provide reliable switching performance, suitable for solar inverters, wind inverters and other fields.
2. **Industrial control system**: In industrial control systems that require high voltage switching and stable performance, this MOSFET can provide reliable switching performance, suitable for high voltage equipment control and other fields.
3. **Power management**: Used in power management systems that require high voltage switching and stable performance, suitable for industrial power supplies, UPS power supplies and other fields.
Through these application examples, it can be seen that 2SK2599_06-VB MOSFET is suitable for a variety of electronic and industrial applications that require medium power and high voltage. Its high voltage tolerance and reliability make it an ideal choice for medium power and high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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