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2SK2543-VB Product details
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### Product Introduction
2SK2543-VB is a single N-channel MOSFET produced by VBsemi in TO220F package. This MOSFET is designed for high voltage applications, with a drain-source voltage of 650V and a continuous drain current capability of 12A, suitable for operation under high voltage and medium current conditions. Its maximum gate voltage is ±30V, and it has an RDS(ON) of 680mΩ (at VGS=10V). This device is manufactured based on planar technology (Plannar), ensuring its reliability and performance in various application environments.
2SK2543-VB is a single N-channel MOSFET produced by VBsemi in TO220F package. This MOSFET is designed for high voltage applications, with a drain-source voltage of 650V and a continuous drain current capability of 12A, suitable for operation under high voltage and medium current conditions. Its maximum gate voltage is ±30V, and it has an RDS(ON) of 680mΩ (at VGS=10V). This device is manufactured based on planar technology (Plannar), ensuring its reliability and performance in various application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 12A
- **Technology**: Planar technology (Plannar)
Domain and module applications：
### Applications and Modules
2SK2543-VB MOSFET has a wide range of applications in many fields. Here are some typical application scenarios:
1. **Power Management**: This MOSFET is suitable for power management modules such as high-voltage switching power supplies, inverters and DC-DC converters. Due to its high drain-source voltage and moderate current carrying capacity, it is suitable for operation under high voltage and medium current conditions.
2. **Industrial Control**: In industrial control systems, 2SK2543-VB MOSFET can be used to drive high-voltage loads and control current. Its high voltage handling capability and moderate on-resistance make it an ideal choice for industrial control systems.
3. **Electric Vehicle Charging Pile**: This MOSFET is also suitable for electric vehicle charging piles to control current and manage voltage. Its high drain-source voltage and moderate current carrying capacity make it an ideal choice for electric vehicle charging piles.
4. **Solar Inverters**: In solar inverters, this MOSFET can be used to convert the DC power generated by solar panels into AC power. Its high voltage and moderate current handling capabilities are suitable for the needs of solar inverters.
5. **Medical Equipment**: In medical equipment, the 2SK2543-VB MOSFET can be used for power management and power control modules, such as medical imaging equipment, surgical instruments, etc.
Through these application examples, it can be seen that the 2SK2543-VB MOSFET has important application prospects in high voltage and medium power applications, which can meet the needs of various industrial and consumer electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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