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2SK2493-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2493-VB is a high power, single N-channel MOSFET in TO252 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high power applications. With a drain-source voltage (VDS) of 20V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 100A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is in the range of 0.5~1.5V.
2SK2493-VB is a high power, single N-channel MOSFET in TO252 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high power applications. With a drain-source voltage (VDS) of 20V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 100A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is in the range of 0.5~1.5V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 20V | 0.5~1.5V | 100A | 6mΩ | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2493-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON)）**: 6mΩ @ VGS=2.5V, 4.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
### Application fields and modules
2SK2493-VB MOSFET has high power and high efficiency characteristics, suitable for the following fields and modules:
1. **Power management system**: In applications requiring high power switching and stable performance, this MOSFET can provide reliable switching performance, suitable for industrial power supplies, server power supplies and high power power supplies.
2. **Motor drive**: In motor control and drive applications that need to handle high power, this MOSFET can provide efficient switching and control characteristics, suitable for power tools, electric vehicles and other high power motor control modules.
3. **Battery management**: For switching and protection circuits in high power battery management systems, 2SK2493-VB can provide reliable high power switching performance, suitable for electric vehicles, energy storage systems and other fields.
4. **Power inverter**: In applications requiring high power inversion and stable performance, this MOSFET can provide reliable switching performance, suitable for solar inverters, wind inverters and other fields.
Through these application examples, it can be seen that the 2SK2493-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require high power and efficient switching characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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