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2SK2415-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2415-VB is a medium power, single N-channel MOSFET in TO251 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for medium power applications. With a drain-source voltage (VDS) of 60V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 35A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 1.7V.
2SK2415-VB is a medium power, single N-channel MOSFET in TO251 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for medium power applications. With a drain-source voltage (VDS) of 60V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 35A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 1.7V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 60V | 1.7V | 35A | 37mΩ | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 60V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 60V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2415-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**: 37mΩ @ VGS=4.5V, 32mΩ @ VGS=10V
- **Drain current (ID)**: 35A
- **Technology**: Trench
- **Model**: 2SK2415-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**: 37mΩ @ VGS=4.5V, 32mΩ @ VGS=10V
- **Drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
### Application fields and modules
2SK2415-VB MOSFET has medium power and high efficiency characteristics, suitable for the following fields and modules:
1. **Power management system**: In applications that require medium power switching and stable performance, this MOSFET can provide reliable switching performance, suitable for home power adapters, industrial power supplies and medium power supplies.
2. **Motor drive**: In motor control and drive applications that need to handle medium power, this MOSFET can provide efficient switching and control characteristics, suitable for power tools, small electric vehicles and other medium power motor control modules.
3. **Automotive electronics**: In automotive electronic systems, this MOSFET can handle the needs of automotive power management and medium power circuit control, suitable for on-board power systems and automotive electronic control modules.
4. **Industrial control**: Used in medium power switching and protection circuits in industrial control systems, 2SK2415-VB can provide reliable medium power switching performance, suitable for various medium power switching applications.
Through these application examples, it can be seen that the 2SK2415-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require medium power and high efficiency switching characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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