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2SK2399-VB TO251 Product details
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### Product Introduction
2SK2399-VB is a single N-channel MOSFET produced by VBsemi in TO251 package. Designed for medium voltage applications, this MOSFET has a drain-source voltage of 100V and a continuous drain current capability of 12A, suitable for operation under medium voltage and medium current conditions. Its maximum gate voltage is ±20V and it has an RDS(ON) of 200mΩ (at VGS=10V). This device is manufactured based on trench technology to ensure its reliability and performance in various medium voltage environments.
2SK2399-VB is a single N-channel MOSFET produced by VBsemi in TO251 package. Designed for medium voltage applications, this MOSFET has a drain-source voltage of 100V and a continuous drain current capability of 12A, suitable for operation under medium voltage and medium current conditions. Its maximum gate voltage is ±20V and it has an RDS(ON) of 200mΩ (at VGS=10V). This device is manufactured based on trench technology to ensure its reliability and performance in various medium voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.5V | 12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.5V | 12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 100V | 1.5V | 12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**: 200mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 12A
- **Technology**: Trench technology
Domain and module applications：
### Applications and Modules
2SK2399-VB MOSFET has a wide range of applications in multiple fields. Here are some typical application scenarios:
1. **Power Management**: This MOSFET is suitable for power management modules such as medium voltage switching power supplies, inverters and DC-DC converters. Due to its medium drain-source voltage and moderate on-resistance, it performs well in medium power applications. MOSFET can be used as a switching element to help regulate voltage and current, improve power efficiency and stability.
2. **Power Tools**: In power tools and mechanical equipment, 2SK2399-VB MOSFET can be used to drive motors and control current. Its medium voltage handling capability and moderate on-resistance make it an ideal choice for power tools.
3. **Lighting Applications**: This MOSFET is also suitable for LED lighting applications for driving and controlling LED lamp beads. Its low on-resistance and moderate voltage make it an ideal choice for LED lighting systems.
4. **Consumer electronics**: In consumer electronics, 2SK2399-VB MOSFET can be used for power management and power control modules, such as TVs, audio systems, computer equipment, etc.
5. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for automotive power management and drive control modules, such as automotive lighting systems, electric window controls, etc.
Through these application examples, it can be seen that 2SK2399-VB MOSFET has important application prospects in medium voltage and medium power applications, which can meet the needs of various industrial and consumer electronics products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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