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2SK2371-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2371-VB is a single N-channel MOSFET produced by VBsemi in TO247 package. This MOSFET is designed for medium and high voltage applications, with a drain-source voltage of 500V and a continuous drain current capability of 40A, suitable for operation under medium and high voltage and high current conditions. Its maximum gate voltage is ±30V and it has an RDS(ON) of 80mΩ (at VGS=10V). This device is manufactured based on SJ_Multi-EPI technology to ensure its reliability and performance in high voltage environments.
2SK2371-VB is a single N-channel MOSFET produced by VBsemi in TO247 package. This MOSFET is designed for medium and high voltage applications, with a drain-source voltage of 500V and a continuous drain current capability of 40A, suitable for operation under medium and high voltage and high current conditions. Its maximum gate voltage is ±30V and it has an RDS(ON) of 80mΩ (at VGS=10V). This device is manufactured based on SJ_Multi-EPI technology to ensure its reliability and performance in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Applications and Modules
2SK2371-VB MOSFET has a wide range of applications in multiple fields. Here are some typical application scenarios:
1. **Power Electronics**: This MOSFET is suitable for power electronics, such as inverters, frequency converters, power conditioners and other high-voltage and high-power applications. Its high drain-source voltage and high current carrying capacity make it a key component in these applications.
2. **Industrial Control**: In industrial control systems, 2SK2371-VB MOSFET can be used to switch and regulate high-voltage and high-power devices to ensure the stability and reliability of the equipment. For example, it is used to control motors, heaters and other equipment.
3. **Chargers and Inverters**: This MOSFET is also suitable for charger and inverter systems to handle high voltages and high currents. Its low on-resistance and high voltage handling capability make it an ideal choice for these systems.
4. **Electric Vehicles**: In the drive system of electric vehicles, the 2SK2371-VB MOSFET can be used to control the power conversion between the motor and the battery. Its high voltage handling capability and high current carrying capacity make it a key component in electric vehicles.
5. **UPS System**: In a UPS (Uninterruptible Power Supply) system, the 2SK2371-VB MOSFET can be used to handle the switching between input and output power, ensuring that the UPS system can provide stable power output when the power is off.
Through these application examples, it can be seen that the 2SK2371-VB MOSFET has important application prospects in medium-high voltage and high current applications, which can meet the needs of various industrial and consumer electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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