Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
800V |
30（±V） |
3.5V |
20A |
|
|
205(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBP18R20SFD
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- Gate-source resistance (RDS(on)) (VGS=10V): 205m次
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications：
Examples of product applicable areas and modules:
1. High-power power module: VBP18R20SFD has a drain-source voltage of 800V and a drain current of 20A. It is suitable for various high-power power modules, such as industrial equipment, telecommunications base stations, etc., and can provide stable and reliable high power. output.
2. Switching power supply: Due to its low gate-source resistance and high drain-source voltage tolerance, it is suitable for various high-power switching power supplies, such as frequency converters, industrial control systems, etc., which can be realized Efficient switch control.
3. Automotive electronic module: In the field of automotive electronics, VBP18R20SFD can be used as a power switching component in automotive electronic modules to control the power output and drive motor of the automotive electric system.
To sum up, VBP18R20SFD is a field effect transistor product with stable performance and suitable for high-power applications. It can be widely used in fields and modules such as high-power power supplies, switching power supplies, and automotive electronic modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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