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2SK2350-VB Product details
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### Product Introduction
2SK2350-VB is a high voltage, single N-channel MOSFET in TO220F package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high voltage applications. With a drain-source voltage (VDS) of 200V, the MOSFET can provide reliable conduction performance at lower gate voltages. Its maximum drain current (ID) is 10A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 3V.
### Detailed parameter description
- **Model**: 2SK2350-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 265mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench
### Application fields and modules
2SK2350-VB MOSFET has the characteristics of high voltage and medium power, and is suitable for the following fields and modules:
1. **Power Management System**: In applications requiring medium- and high-voltage power conversion and switch-mode power supplies (SMPS), this MOSFET can provide reliable switching performance and is suitable for industrial power supplies and medium-power power supplies.
2. **Lighting System**: For use in switching and control circuits in LED drivers and lighting systems, the 2SK2350-VB can provide efficient energy conversion and stable current control, and is suitable for indoor and outdoor lighting systems.
3. **Electric Vehicle Charging Pile**: In electric vehicle charging piles that need to handle medium- and high-voltage and medium-power, this MOSFET can provide reliable switching performance to ensure efficient operation and long-term stability of the charging pile.
4. **Power Switch**: In applications requiring medium- and high-voltage switches and protection circuits, the 2SK2350-VB can provide reliable high-voltage switching performance and is suitable for a variety of high-voltage switching applications.
Through these application examples, it can be seen that the 2SK2350-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require high-voltage, medium-power switching characteristics.
2SK2350-VB is a high voltage, single N-channel MOSFET in TO220F package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high voltage applications. With a drain-source voltage (VDS) of 200V, the MOSFET can provide reliable conduction performance at lower gate voltages. Its maximum drain current (ID) is 10A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 3V.
### Detailed parameter description
- **Model**: 2SK2350-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 265mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench
### Application fields and modules
2SK2350-VB MOSFET has the characteristics of high voltage and medium power, and is suitable for the following fields and modules:
1. **Power Management System**: In applications requiring medium- and high-voltage power conversion and switch-mode power supplies (SMPS), this MOSFET can provide reliable switching performance and is suitable for industrial power supplies and medium-power power supplies.
2. **Lighting System**: For use in switching and control circuits in LED drivers and lighting systems, the 2SK2350-VB can provide efficient energy conversion and stable current control, and is suitable for indoor and outdoor lighting systems.
3. **Electric Vehicle Charging Pile**: In electric vehicle charging piles that need to handle medium- and high-voltage and medium-power, this MOSFET can provide reliable switching performance to ensure efficient operation and long-term stability of the charging pile.
4. **Power Switch**: In applications requiring medium- and high-voltage switches and protection circuits, the 2SK2350-VB can provide reliable high-voltage switching performance and is suitable for a variety of high-voltage switching applications.
Through these application examples, it can be seen that the 2SK2350-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require high-voltage, medium-power switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
Domain and module applications：
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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