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2SK2316-VB Product details
Back to previous pageProduct introduction：
### 2SK2316-VB Product Introduction
2SK2316-VB is a single N-channel MOSFET with a drain-source voltage of 30V and a drain current capability of 6.8A. It adopts SOT89 package and is suitable for applications requiring medium power and small size. Its low on-resistance and low threshold voltage make it excel in various power management and power control applications.
2SK2316-VB is a single N-channel MOSFET with a drain-source voltage of 30V and a drain current capability of 6.8A. It adopts SOT89 package and is suitable for applications requiring medium power and small size. Its low on-resistance and low threshold voltage make it excel in various power management and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | 30mΩ | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### 2SK2316-VB Detailed parameter description
- **Model**: 2SK2316-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.8A
- **Technology**: Trench
- **Model**: 2SK2316-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.8A
- **Technology**: Trench
Domain and module applications：
### Applications and Module Examples
1. **Battery Protection**:
2SK2316-VB can be used for charge and discharge control in various battery management systems. Its high current and low on-resistance make it an ideal choice for battery protection systems.
2. **Mobile Device Charger**:
In mobile phone and tablet chargers, this MOSFET can be used for power switching and power management. Its small size and high performance make it a key component in mobile device chargers.
3. **LED Driver**:
In LED drivers, 2SK2316-VB can be used for switching control of LEDs. Its low on-resistance and low threshold voltage ensure high efficiency and stability of LED drivers.
4. **Portable Electronic Devices**:
In portable electronic devices, this MOSFET can be used for various power control and management circuits. Its high performance and small size make it an ideal choice in portable electronic devices.
These examples illustrate the wide range of applications of the 2SK2316-VB in various fields and modules, where its high performance and reliability make it an ideal choice for a wide range of medium power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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