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2SK2313-VB Product details
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### Product Introduction
2SK2313-VB is a high power, single N-channel MOSFET in TO3P package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high power applications. With a drain-source voltage (VDS) of 60V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 210A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 3V.
2SK2313-VB is a high power, single N-channel MOSFET in TO3P package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high power applications. With a drain-source voltage (VDS) of 60V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 210A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 3V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | 3.6mΩ | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2313-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**: 3.6mΩ @ VGS=4.5V, 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
### Application fields and modules
2SK2313-VB MOSFET has high power and high efficiency characteristics, suitable for the following fields and modules:
1. **Power management system**: In applications requiring high power switching and stable performance, this MOSFET can provide reliable switching performance, suitable for industrial power supplies and high power power supplies.
2. **Motor drive**: In motor control and drive applications that need to handle high power, this MOSFET can provide efficient switching and control characteristics, suitable for electric vehicle drive systems, industrial motor control and motor control modules in high-power home appliances.
3. **Automotive electronics**: In automotive electronic systems, this MOSFET can handle the needs of automotive power management and high-power circuit control, suitable for high-power control modules in on-board power systems and electric vehicles.
4. **Industrial Control**: Used in high-power switches and protection circuits in industrial control systems, 2SK2313-VB can provide reliable high-power switching performance and is suitable for various high-power switching applications in industrial automation control systems.
Through these application examples, it can be seen that 2SK2313-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require high-power and efficient switching characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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