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2SK2256-01-VB Product details

Product introduction:

### Product Introduction

2SK2256-01-VB is a high voltage, single N-channel MOSFET in TO220 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high voltage and high power applications. With a drain-source voltage (VDS) of 250V, this MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 14A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 3.5V.

### Detailed parameter description

- **Model**: 2SK2256-01-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 14A
- **Technology**: Trench

### Application fields and modules

2SK2256-01-VB MOSFET has the characteristics of high voltage and high power, and is suitable for the following fields and modules:

1. **Power Management System**: In applications requiring high-voltage power conversion and switch-mode power supplies (SMPS), this MOSFET can provide reliable switching performance and is suitable for industrial power supplies and high-voltage power supplies.

2. **Motor Drive**: In motor control and drive applications requiring high power output, this MOSFET can provide efficient switching and control characteristics and is suitable for motor control modules in electric vehicle drive systems, industrial automation equipment, and high-power home appliances.

3. **Automotive Electronics**: In automotive electronic systems, this MOSFET can handle the high power requirements of automotive power management and motor control and is suitable for motor control modules in on-board power systems and electric vehicles.

4. **Industrial Control**: For high-power switching and protection circuits in industrial control systems, the 2SK2256-01-VB can provide reliable high-power switching performance and is suitable for various high-power switching applications in industrial automation control systems.

Through these application examples, it can be seen that the 2SK2256-01-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require high-voltage, high-power switching characteristics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N-Channel 250V 3.5V 14A 190mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N-Channel 250V 3.5V 14A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N-Channel 250V 3.5V 14A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N-Channel

Domain and module applications:

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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