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2SK2233-VB Product details
Back to previous pageProduct introduction：
### 2SK2233-VB Product Introduction
2SK2233-VB is a single N-channel MOSFET with 60V drain-source voltage and 210A drain current capability. It adopts TO3P package and is suitable for applications requiring high power and high reliability. Its extremely low on-resistance and high threshold voltage make it excel in power switching and power management applications.
2SK2233-VB is a single N-channel MOSFET with 60V drain-source voltage and 210A drain current capability. It adopts TO3P package and is suitable for applications requiring high power and high reliability. Its extremely low on-resistance and high threshold voltage make it excel in power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | 3.6mΩ | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2SK2233-VB Detailed parameter description
- **Model**: 2SK2233-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Model**: 2SK2233-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
### Applications and Module Examples
1. **Electric Vehicle Control**:
2SK2233-VB can be used in power switch modules in electric vehicle motor drives. Its high current and low on-resistance make it an ideal choice in electric vehicle control systems.
2. **Power Inverter**:
In power inverters, this MOSFET can be used in power switch modules for high power inverters. Its high reliability and high power handling capability ensure stable operation of the inverter.
3. **Industrial Power**:
In industrial power systems, 2SK2233-VB can be used in various types of power management modules. Its high power and high reliability make it a key component in industrial power systems.
4. **Battery Management**:
In battery management systems, this MOSFET can be used in charge and discharge control circuits. Its high current and low on-resistance make it an ideal switching element in battery management systems.
These examples illustrate the wide range of applications of the 2SK2233-VB in various fields and modules, where its high performance and reliability make it an ideal choice for high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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