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2SK2218-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2218-VB is a low voltage, single N-channel MOSFET in SOT89 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for low voltage and high power applications. With a drain-source voltage (VDS) of 30V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 6.8A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 1.7V.
2SK2218-VB is a low voltage, single N-channel MOSFET in SOT89 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for low voltage and high power applications. With a drain-source voltage (VDS) of 30V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 6.8A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 1.7V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | 30mΩ | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2218-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**: 30mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology**: Trench
- **Model**: 2SK2218-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**: 30mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology**: Trench
Domain and module applications：
### Application fields and modules
2SK2218-VB MOSFET has the characteristics of low voltage and high power, and is suitable for the following fields and modules:
1. **Power management system**: In applications requiring medium and low voltage power conversion and switch mode power supply (SMPS), this MOSFET can provide reliable switching performance, suitable for home power adapters and small power supplies.
2. **Motor drive**: In motor control and drive applications requiring high power output, this MOSFET can provide efficient switching and control characteristics, suitable for electric vehicle drive systems, industrial automation equipment and motor control modules in high-power home appliances.
3. **Automotive electronics**: In automotive electronic systems, this MOSFET can handle the high power requirements of automotive power management and motor control, and is suitable for on-board power systems and motor control modules in electric vehicles.
4. **Industrial Control**: Used in high-power switches and protection circuits in industrial control systems, 2SK2218-VB can provide reliable high-power switching performance and is suitable for various high-power switching applications in industrial automation control systems.
Through these application examples, it can be seen that 2SK2218-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require low-voltage, high-power switching characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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