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2SK2168-VB Product details
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### 2SK2168-VB MOSFET Product Introduction
2SK2168-VB is a single N-channel MOSFET manufactured by VBsemi in SOT89 package. This device is suitable for low power applications, with high drain-source voltage (VDS 200V) and moderate current carrying capacity (ID 1A). Using trench process technology, it has low on-resistance and moderate threshold voltage, suitable for circuit design requiring high efficiency and reliability.
2SK2168-VB is a single N-channel MOSFET manufactured by VBsemi in SOT89 package. This device is suitable for low power applications, with high drain-source voltage (VDS 200V) and moderate current carrying capacity (ID 1A). Using trench process technology, it has low on-resistance and moderate threshold voltage, suitable for circuit design requiring high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 200V | 3V | 1A | 1600mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### 2SK2168-VB Detailed parameter description
- **Model**: 2SK2168-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1600mΩ @ VGS = 10V
- **Drain current (ID)**: 1A
- **Technology**: Trench process
- **Model**: 2SK2168-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1600mΩ @ VGS = 10V
- **Drain current (ID)**: 1A
- **Technology**: Trench process
Domain and module applications：
### Application Fields and Module Examples
1. **Low Voltage, Low Power Supplies**:
2SK2168-VB can be used in low power power management circuits, such as portable devices, small appliances, etc. Its low on-resistance helps improve power conversion efficiency.
2. **LED Drivers**:
In LED lighting applications, 2SK2168-VB can be used as a switching element in LED drivers to control the brightness and operating mode of LEDs. Its moderate current carrying capacity and low on-resistance help improve the efficiency and stability of LED drivers.
3. **Battery Management**:
This device is suitable for low power battery management systems, such as portable devices, electronic toys, etc. Its low power characteristics help extend battery life and improve charging and discharging efficiency.
4. **Industrial Control**:
In industrial control systems, 2SK2168-VB can be used as a low-power switch control element to control the operation of various industrial equipment. Its high reliability and voltage resistance characteristics are suitable for long-term stable operation in industrial environments.
The above are typical application scenarios of 2SK2168-VB in low-power applications. Its characteristics make it an ideal choice for a variety of circuit designs, and can meet the application requirements with high power, efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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