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2SK2167-VB Product details

Product introduction:

### Product Introduction

2SK2167-VB is a high voltage, single N-channel MOSFET in SOT89 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high voltage applications. With a drain-source voltage (VDS) of 200V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 1A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 3V.

### Detailed parameter description

- **Model**: 2SK2167-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1600mΩ @ VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Trench

### Application fields and modules

2SK2167-VB MOSFET has high voltage and efficient switching performance, suitable for the following fields and modules:

1. **Power Management System**: In applications requiring medium- and high-voltage power conversion and switch-mode power supplies (SMPS), this MOSFET can provide reliable switching performance and is suitable for industrial power supplies and high-voltage power supplies.

2. **Lighting System**: For switching and control circuits in LED drivers and lighting systems, the 2SK2167-VB can provide efficient energy conversion and stable current control, suitable for indoor and outdoor lighting systems.

3. **Electric Vehicle Charging Pile**: In electric vehicle charging piles that need to handle medium- and high-voltage and lower currents, this MOSFET can provide reliable switching performance to ensure efficient operation and long-term stability of the charging pile.

4. **Power Switch**: In applications requiring high-voltage switching and protection circuits, the 2SK2167-VB can provide reliable high-voltage switching performance and is suitable for a variety of high-voltage switching applications.

Through these application examples, it can be seen that the 2SK2167-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require high-voltage and efficient switching characteristics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N-Channel 200V 3V 1A 1600mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-N-Channel 200V 3V 1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-N-Channel 200V 3V 1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-N-Channel

Domain and module applications:

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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