2SK2167-VB Product details
Product introduction:
2SK2167-VB is a high voltage, single N-channel MOSFET in SOT89 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for high voltage applications. With a drain-source voltage (VDS) of 200V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 1A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 3V.
### Detailed parameter description
- **Model**: 2SK2167-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1600mΩ @ VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Trench
### Application fields and modules
2SK2167-VB MOSFET has high voltage and efficient switching performance, suitable for the following fields and modules:
1. **Power Management System**: In applications requiring medium- and high-voltage power conversion and switch-mode power supplies (SMPS), this MOSFET can provide reliable switching performance and is suitable for industrial power supplies and high-voltage power supplies.
2. **Lighting System**: For switching and control circuits in LED drivers and lighting systems, the 2SK2167-VB can provide efficient energy conversion and stable current control, suitable for indoor and outdoor lighting systems.
3. **Electric Vehicle Charging Pile**: In electric vehicle charging piles that need to handle medium- and high-voltage and lower currents, this MOSFET can provide reliable switching performance to ensure efficient operation and long-term stability of the charging pile.
4. **Power Switch**: In applications requiring high-voltage switching and protection circuits, the 2SK2167-VB can provide reliable high-voltage switching performance and is suitable for a variety of high-voltage switching applications.
Through these application examples, it can be seen that the 2SK2167-VB MOSFET is suitable for a variety of electronic and industrial application scenarios that require high-voltage and efficient switching characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 200V | 3V | 1A | 1600mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
Domain and module applications:
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