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2SK2158-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**2SK2158-VB** is a single N-channel MOSFET in SOT23-3 package for low power applications. With moderate drain-source voltage, low on-resistance and low drain current capability, it is suitable for circuit designs requiring low power and small size.
**2SK2158-VB** is a single N-channel MOSFET in SOT23-3 package for low power applications. With moderate drain-source voltage, low on-resistance and low drain current capability, it is suitable for circuit designs requiring low power and small size.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: 20 (±V)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench type
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: 20 (±V)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench type
Domain and module applications：
### Application Fields and Modules
**2SK2158-VB** is widely used in the following fields and modules:
1. **Portable Electronics**:
- Applicable to power management modules in portable electronic products such as smartphones and tablets, such as charging management, battery management, etc.
2. **Consumer Electronics**:
- Power management and signal switching in products such as portable audio devices and handheld game consoles.
3. **Medical Electronics**:
- Used in power management modules and signal processing modules in medical equipment, such as medical imaging equipment, heart rate monitors, etc.
4. **Industrial Control**:
- Applicable to sensor signal processing, control modules in industrial automation equipment, etc.
5. **Communication Equipment**:
- Used in power amplifiers and power control modules in communication base station equipment to ensure high efficiency and stability of the equipment.
### Summary
**2SK2158-VB** is a single N-channel MOSFET suitable for low-power applications, with moderate drain-source voltage, low on-resistance and low drain current capability. It is widely used in portable electronics, consumer electronics, medical electronics, industrial control and communication equipment, providing low-power and small-size solutions for circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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