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2SK2158A-T2B-AT-VB Product details
Back to previous pageProduct introduction：
### 1. Product introduction of 2SK2158A-T2B-AT-VB
2SK2158A-T2B-AT-VB is a single-channel N-type power MOSFET, using trench technology, with low voltage and low power characteristics. Its package is SOT23-3, suitable for power control and switching applications in low power applications.
2SK2158A-T2B-AT-VB is a single-channel N-type power MOSFET, using trench technology, with low voltage and low power characteristics. Its package is SOT23-3, suitable for power control and switching applications in low power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### 2. Detailed parameter description of 2SK2158A-T2B-AT-VB model
- **Package: ** SOT23-3
- **Configuration: ** Single N-Channel
- **Drain-Source Voltage (VDS): ** 60V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 1.7V
- **On-Resistance (RDS(ON)): **
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain Current (ID): ** 0.3A
- **Technology: ** Trench
- **Package: ** SOT23-3
- **Configuration: ** Single N-Channel
- **Drain-Source Voltage (VDS): ** 60V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 1.7V
- **On-Resistance (RDS(ON)): **
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain Current (ID): ** 0.3A
- **Technology: ** Trench
Domain and module applications：
### 3. Application fields and module examples
2SK2158A-T2B-AT-VB power MOSFET is suitable for the following fields and modules:
1. **Low-power switching circuits:** Due to its low-power characteristics, this MOSFET is suitable for various low-power switching circuits, such as power management and signal processing in small electronic devices.
2. **Power management:** In portable devices and consumer electronics, 2SK2158A-T2B-AT-VB can be used in power management modules to provide effective power control and management.
3. **LED driver:** This device is suitable for driver modules in LED lighting products to achieve high-efficiency control and regulation of LEDs.
4. **Mobile phones and tablets:** 2SK2158A-T2B-AT-VB can be used in power control modules in portable devices such as mobile phones and tablets to provide stable power output.
5. **Battery Management:** In applications where battery charge and discharge management is required, this MOSFET can be used to control the battery charge and discharge process to ensure battery safety and stability.
In summary, 2SK2158A-T2B-AT-VB has the characteristics of low power and low voltage, and is suitable for various low-power applications, especially power control and switching applications in portable devices and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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