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2SK2147-01R-VB Product details
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### 2SK2147-01R-VB MOSFET Product Introduction
2SK2147-01R-VB is a single N-channel MOSFET manufactured by VBsemi in TO3P package. This device is suitable for high voltage and high power applications, with high drain-source voltage (VDS 900V) and high current carrying capacity (ID 9A). Using SJ_Multi-EPI technology, it has low on-resistance and high threshold voltage, suitable for circuit design requiring high efficiency and reliability.
2SK2147-01R-VB is a single N-channel MOSFET manufactured by VBsemi in TO3P package. This device is suitable for high voltage and high power applications, with high drain-source voltage (VDS 900V) and high current carrying capacity (ID 9A). Using SJ_Multi-EPI technology, it has low on-resistance and high threshold voltage, suitable for circuit design requiring high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2SK2147-01R-VB Detailed parameter description
- **Model**: 2SK2147-01R-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Fields and Module Examples
1. **Power Electronics**:
2SK2147-01R-VB can be used in high voltage and high power applications in the field of power electronics, such as inverters, frequency converters, power modulators, etc. Its high drain-source voltage and current carrying capacity enable it to handle high voltage and high power power conversion requirements.
2. **Electric Vehicles**:
In the motor drive system of electric vehicles, 2SK2147-01R-VB can be used as a switching element of the motor controller to control the start and stop and speed regulation of the motor. Its high current carrying capacity and low on-resistance help improve the performance and efficiency of electric vehicles.
3. **Industrial High Voltage Equipment**:
This device is suitable for power management and control circuits in industrial high voltage equipment, such as high voltage power supplies, X-ray equipment, etc. Its high reliability and high voltage resistance make it an ideal choice for industrial high voltage equipment design.
4. **Solar Inverters**:
In solar inverters, 2SK2147-01R-VB can be used as a key component of the switching circuit to help convert the DC power generated by the solar panel into AC power. Its high drain-source voltage and current carrying capacity are suitable for long-term stable operation in solar inverters.
The above are typical application scenarios of 2SK2147-01R-VB in high voltage and high power applications. Its characteristics make it an ideal choice for a variety of circuit designs, and can meet the application requirements with high power, efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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