VBP185R10 Product details
Product introduction:
VBP185R10 is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 850V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.3V. It adopts Plannar technology and is packaged as TO247. This product features high drain current and low on-resistance, making it suitable for high-power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 30(±V) | 3.3V | 10A | 1150 (mΩ) | Plannar |
- VDS (drain-source voltage): 850V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.3V
- On-resistance (m次) at VGS=10V: 1150m次
- Maximum drain current (ID): 10A
- Technology: Plannar
-Package:TO247
Domain and module applications:
1. Industrial frequency converters: Because VBP185R10 has high drain voltage and high current withstand capability, it is suitable for power switches and inverter modules in industrial frequency converters.
2. High-performance power module: Among high-performance power modules, this product can be used in switching power supplies and DC-DC converters to provide stable power output.
3. Wind power controller: In wind power systems, VBP185R10 can be used in power switches and current control circuits in wind power controllers to ensure efficient operation of the system.
4. Power transmission and distribution equipment: Suitable for switching devices and protection circuits in power transmission and distribution equipment to achieve safe and stable operation of the power system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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