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2SK2111-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2111-VB is a low voltage, single N-channel MOSFET in SOT89 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for low voltage application scenarios. With a drain-source voltage (VDS) of 60V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 5.5A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 1.7V.
2SK2111-VB is a low voltage, single N-channel MOSFET in SOT89 package. It is designed with Trench technology, with efficient switching performance and low on-resistance, suitable for low voltage application scenarios. With a drain-source voltage (VDS) of 60V, the MOSFET can provide reliable conduction performance at a lower gate voltage. Its maximum drain current (ID) is 5.5A, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 1.7V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 60V | 1.7V | 5.5A | 88mΩ | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2111-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**: 88mΩ @ VGS=4.5V, 76mΩ @ VGS=10V
- **Drain current (ID)**: 5.5A
- **Technology**: Trench
- **Model**: 2SK2111-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**: 88mΩ @ VGS=4.5V, 76mΩ @ VGS=10V
- **Drain current (ID)**: 5.5A
- **Technology**: Trench
Domain and module applications：
### Application Fields and Modules
2SK2111-VB MOSFET has low voltage and efficient switching performance, suitable for the following fields and modules:
1. **Power Management System**: In applications requiring medium and low voltage power conversion and switch mode power supply (SMPS), this MOSFET can provide reliable switching performance, suitable for home power adapters and small power supply.
2. **LED Driver**: For switching and control circuits in LED lighting systems, 2SK2111-VB can provide efficient energy conversion and stable current control, suitable for indoor and outdoor lighting systems.
3. **Portable Electronic Devices**: In mobile phones, tablets and portable electronic devices, this MOSFET can provide efficient energy conversion and low power consumption characteristics, suitable for battery management and power management modules.
4. **Sensor Interface**: In sensor interface and signal conditioning circuits, this MOSFET can provide high-speed switching and low-voltage operation characteristics, suitable for various sensor interface and signal conditioning applications.
Through these application examples, it can be seen that the 2SK2111-VB MOSFET is suitable for a variety of electronic application scenarios that require low voltage and high efficiency switching characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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