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2SK2110-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
The 2SK2110-VB is a single N-channel MOSFET in a SOT89 package. With a high drain-source voltage (VDS) of 100V, the device is suitable for applications that need to handle medium voltages. Key features include a drain current (ID) of 4.2A, an on-resistance (RDS(ON)) of 125mΩ @ VGS=4.5V and 102mΩ @ VGS=10V, a threshold voltage (Vth) of 1.8V, and is manufactured using trench structure technology, providing excellent switching performance and reliability.
The 2SK2110-VB is a single N-channel MOSFET in a SOT89 package. With a high drain-source voltage (VDS) of 100V, the device is suitable for applications that need to handle medium voltages. Key features include a drain current (ID) of 4.2A, an on-resistance (RDS(ON)) of 125mΩ @ VGS=4.5V and 102mΩ @ VGS=10V, a threshold voltage (Vth) of 1.8V, and is manufactured using trench structure technology, providing excellent switching performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 100V | 1.8V | 4.2A | 125mΩ | 102mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 100V | 1.8V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 100V | 1.8V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2110-VB
- **Package**: SOT89
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 125mΩ @ VGS=4.5V, 102mΩ @ VGS=10V
- **Drain current (ID)**: 4.2A
- **Technology**: Channel structure
Domain and module applications：
### Applications and Modules
2SK2110-VB is suitable for a variety of medium power and medium voltage applications.
1. **Power Management**: In various medium power applications, 2SK2110-VB can provide reliable switching performance and efficient power conversion, suitable for various types of inverters and power adapters.
2. **Motor Drive**: In medium power motor drivers, the device can be used to drive various types of motors, providing efficient power conversion and reliable control.
3. **Lighting System**: In lighting systems that require medium power LEDs, 2SK2110-VB can provide stable current control and efficient energy conversion, ensuring stable brightness and long life of LEDs.
4. **Power Switch**: Due to its high voltage and low on-resistance, the device can be used in power switches and switching circuits, providing fast switching speeds and low losses.
In summary, 2SK2110-VB is a MOSFET suitable for medium power and medium voltage applications with excellent switching performance and reliability. It is suitable for power management, motor drive, lighting systems, power switches and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
