VBP185R06 Product details
Product introduction:
VBsemi's VBP185R06 model is a Single N-type power field effect transistor (MOSFET) packaged in TO247. The device is manufactured using Plannar technology for excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 850V, a maximum drain current (ID) of 6A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 1700mΩ at VGS=10V.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 30(±V) | 3.5V | 6A | 1700 (mΩ) | Plannar |
Detailed parameter description:
- Product model: VBP185R06
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 850V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1700m次
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO247
Domain and module applications:
1. Power converter: VBP185R06 can be used in power switching circuits in power converters, such as AC to DC, DC to AC and other converter modules, to help achieve efficient conversion and transmission of electric energy.
2. Power transmission equipment: This device is also suitable for power control modules in power transmission equipment, such as transformers, inductors, etc., to achieve regulation and stability of voltage and current.
3. Industrial automation equipment: VBP185R06 can be used as power switch modules in industrial automation equipment, such as PLCs, frequency converters, etc., to control the start, stop and operating status of the equipment.
These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBP185R06 make it an ideal choice in these applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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