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2SK2036-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2036-VB is a single N-channel MOSFET in a SOT23-3 package. The device has a low drain-source voltage (VDS) of 60V, suitable for low-voltage applications. Key features include 0.3A drain current (ID), 3100mΩ @ VGS=4.5V and 2800mΩ @ VGS=10V on-resistance (RDS(ON)), 1.7V threshold voltage (Vth), and is manufactured using trench structure technology, providing good switching performance and reliability.
2SK2036-VB is a single N-channel MOSFET in a SOT23-3 package. The device has a low drain-source voltage (VDS) of 60V, suitable for low-voltage applications. Key features include 0.3A drain current (ID), 3100mΩ @ VGS=4.5V and 2800mΩ @ VGS=10V on-resistance (RDS(ON)), 1.7V threshold voltage (Vth), and is manufactured using trench structure technology, providing good switching performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2036-VB
- **Package**: SOT23-3
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS=4.5V, 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Channel structure
- **Model**: 2SK2036-VB
- **Package**: SOT23-3
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS=4.5V, 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Channel structure
Domain and module applications：
### Applications and Modules
2SK2036-VB is suitable for a variety of low-power and low-voltage applications.
1. **Mobile devices**: Due to its small package and low power characteristics, the device is suitable for power management and control modules in mobile devices, such as smartphones, tablets, etc.
2. **Power management**: In various low-power power applications, 2SK2036-VB can provide reliable switching performance and efficient power conversion, suitable for small power adapters and chargers, etc.
3. **Sensor interface**: In sensor interface circuits, the device can be used for signal amplification and switch control to ensure stable operation and low power consumption of sensors.
4. **LED driver**: Although the drain current is low, 2SK2036-VB is still a suitable choice for the driver circuit of low-power LED lamps, providing stable current control.
In summary, 2SK2036-VB is a MOSFET suitable for low power and low voltage applications with good switching performance and reliability. It is suitable for mobile devices, power management, sensor interface and LED driving.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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