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2SK2022-01M-VB Product details
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### 2SK2022-01M-VB Product Introduction
2SK2022-01M-VB is a high performance single N-channel MOSFET with 650V drain-source voltage and 7A drain current capability. It adopts TO220F package and is suitable for applications requiring high reliability and high efficiency. Its excellent on-resistance and low threshold voltage make it excellent in power conversion and power control.
2SK2022-01M-VB is a high performance single N-channel MOSFET with 650V drain-source voltage and 7A drain current capability. It adopts TO220F package and is suitable for applications requiring high reliability and high efficiency. Its excellent on-resistance and low threshold voltage make it excellent in power conversion and power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2SK2022-01M-VB Detailed parameter description
- **Model**: 2SK2022-01M-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Planar structure
- **Model**: 2SK2022-01M-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Planar structure
Domain and module applications：
### Applications and Module Examples
1. **Power Management**:
2SK2022-01M-VB can be used in various types of power management applications, including switching power supplies and power adapters. Its high voltage and current capabilities make it an ideal choice in these applications, such as the main switch device in switching power supplies.
2. **Industrial Control**:
In industrial control systems, this MOSFET can be used in motor drives and inverters. Its low on-resistance and high current capability ensure high efficiency and stability of the system.
3. **Electric Vehicle Charger**:
2SK2022-01M-VB is suitable for power switch modules in electric vehicle chargers. Its high reliability and high efficiency make it a key component in electric vehicle chargers, ensuring the performance and safety of the charger.
4. **Lighting System**:
In LED drivers and lighting systems, this MOSFET can be used for power management of high-power LED lamps. Its high efficiency and high power handling capability make it ideal for lighting systems.
These examples illustrate the wide application of 2SK2022-01M-VB in various fields and modules, and its high performance and reliability make it ideal for power conversion and power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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