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2SK2010-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**2SK2010-VB** is a high-performance single N-channel MOSFET in TO220F package with good conduction performance and high reliability. Its rated drain-source voltage (VDS) is 250V, gate-source voltage (VGS) is ±20V, gate threshold voltage (Vth) is 3V, RDS(ON) is 1100mΩ at VGS=10V, and maximum continuous drain current (ID) is 4.4A. The device is manufactured using advanced trench technology and is suitable for a variety of high-efficiency power supply and switching circuit applications.
**2SK2010-VB** is a high-performance single N-channel MOSFET in TO220F package with good conduction performance and high reliability. Its rated drain-source voltage (VDS) is 250V, gate-source voltage (VGS) is ±20V, gate threshold voltage (Vth) is 3V, RDS(ON) is 1100mΩ at VGS=10V, and maximum continuous drain current (ID) is 4.4A. The device is manufactured using advanced trench technology and is suitable for a variety of high-efficiency power supply and switching circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 250V | 3V | 4.4A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 250V | 3V | 4.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 250V | 3V | 4.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2010-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 4.4A
- **Technology**: Trench technology (Trench)
Domain and module applications：
### Applications and Modules
**2SK2010-VB** is suitable for a variety of power management and switching circuit applications, including but not limited to the following areas and modules:
1. **Power Conversion Module**:
- **DC-DC Converter**: Due to its high VDS and low RDS(ON) characteristics, it is suitable for buck and boost converters.
- **AC-DC Converter**: Used for high-efficiency power conversion in switch-mode power supplies.
2. **Motor Drive Module**:
- **Brushless DC Motor Drive**: Its high current capability and high voltage resistance make it excellent in the drive circuit of brushless DC motors.
- **Stepper Motor Drive**: In the field of industrial automation and robotics, it is used to precisely control stepper motors.
3. **Audio Amplifier Module**:
- **Switching Amplifier**: Due to its high-frequency switching performance, it can be used in Class D audio amplifiers to improve the efficiency and sound quality of the amplifier.
4. **Protection circuit module**:
- **Overcurrent protection circuit**: It can be used in circuit protection modules to prevent overcurrent from damaging the circuit.
- **Voltage clamp circuit**: Its high withstand voltage characteristics make it suitable as a voltage clamp component to protect sensitive electronic components.
In these applications, 2SK2010-VB MOSFET provides an efficient and stable solution for electronic equipment through its excellent electrical characteristics and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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