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2SK2002-01MR-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2002-01MR-VB is a single N-channel MOSFET produced by VBsemi in TO220F package. Designed for high voltage applications, this MOSFET has a drain-source voltage of 650V and a continuous drain current capability of 2A, suitable for operation under high voltage and high current conditions. Its maximum gate voltage is ±30V and it has an RDS(ON) of 1700mΩ (at VGS=10V). This device is manufactured based on planar technology to ensure its reliability and performance in various high voltage environments.
2SK2002-01MR-VB is a single N-channel MOSFET produced by VBsemi in TO220F package. Designed for high voltage applications, this MOSFET has a drain-source voltage of 650V and a continuous drain current capability of 2A, suitable for operation under high voltage and high current conditions. Its maximum gate voltage is ±30V and it has an RDS(ON) of 1700mΩ (at VGS=10V). This device is manufactured based on planar technology to ensure its reliability and performance in various high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 2A
- **Technology**: Planar technology
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 2A
- **Technology**: Planar technology
Domain and module applications：
### Applications and Modules
2SK2002-01MR-VB MOSFET has a wide range of applications in multiple fields. Here are some typical application scenarios:
1. **Power Management**: Due to its high drain-source voltage and low on-resistance, this MOSFET is ideal for power management modules such as switch mode power supplies (SMPS), inverters, and DC-DC converters. In these applications, MOSFETs are used as switching elements to help regulate voltage and current to improve the efficiency and stability of the power supply.
2. **Motor Drive**: This MOSFET is capable of handling higher voltages and currents, making it ideal for motor control and drive circuits such as industrial motor drives and motor control in home appliances. These applications require MOSFETs to have high withstand voltage and low conduction loss characteristics to ensure stable operation of the motor under different load conditions.
3. **Lighting System**: In LED drivers and lighting control systems, the high voltage handling capability and stable switching performance of the 2SK2002-01MR-VB MOSFET make it an ideal choice. These systems require MOSFETs to operate reliably at high frequencies while maintaining low power consumption.
4. **Audio Amplifier**: This MOSFET can also be used in high-fidelity audio amplifier circuits, especially in application scenarios that require high-voltage drive and low distortion. The linear characteristics and high input impedance of the MOSFET can help improve the quality of audio signals.
5. **Renewable Energy Systems**: In solar and wind energy conversion systems, the 2SK2002-01MR-VB MOSFET is used to handle the conversion of high-voltage DC and AC power. These systems require efficient switching elements to maximize energy conversion efficiency and reduce power consumption.
Through these application examples, it can be seen that the 2SK2002-01MR-VB MOSFET plays an important role in high-voltage, high-current and high-frequency applications, and can meet the needs of a variety of industrial and consumer electronics products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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