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2SK1968-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1968-VB Product Introduction
2SK1968-VB is a single N-channel MOSFET in TO3P package, suitable for high voltage and medium power applications. This MOSFET has a drain-source voltage (VDS) of 600V and a drain current (ID) of 11A, with low on-resistance and high efficiency, suitable for occasions requiring high voltage switches and amplifier circuits. Manufactured using SJ_Multi-EPI technology, it provides excellent performance and reliability.
2SK1968-VB is a single N-channel MOSFET in TO3P package, suitable for high voltage and medium power applications. This MOSFET has a drain-source voltage (VDS) of 600V and a drain current (ID) of 11A, with low on-resistance and high efficiency, suitable for occasions requiring high voltage switches and amplifier circuits. Manufactured using SJ_Multi-EPI technology, it provides excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2. 2SK1968-VB Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### 3. Application fields and module examples
2SK1968-VB is suitable for a variety of high-voltage and medium-power applications, including but not limited to:
1. **Industrial power supply**:
- In industrial power supply systems, 2SK1968-VB can be used in circuits such as high-power switching power supplies, inverters and regulators. Its high drain-source voltage and low on-resistance characteristics make it an ideal choice for high-power applications.
2. **Electric vehicle charging pile**:
- In electric vehicle charging piles, 2SK1968-VB can be used to control and manage charging circuits. Its high current and low on-resistance characteristics ensure high efficiency and reliability of the charging pile.
3. **Industrial drive**:
- In industrial drives, 2SK1968-VB can be used to control and drive various high-power motors and equipment, such as large fans, pumps, etc. Its high efficiency and reliability ensure the stable operation of the system.
4. **Power Inverter**:
- In the power inverter, 2SK1968-VB can be used to convert DC to AC. Its high power and current capabilities make it an important component in the inverter system.
From the above application scenarios, it can be seen that 2SK1968-VB has a wide range of applicability and can meet various high voltage and medium power demand applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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