中文
English
2SK1960-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SK1960-VB**
2SK1960-VB is a high-performance single N-channel MOSFET with SOT89 package type. This product adopts trench technology and has excellent voltage and current performance, suitable for low power density applications. Its main features include 30V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 6.8A continuous drain current (ID). In addition, it has a low on-resistance (RDS(ON)) at different gate-source voltages, which are 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V respectively.
**Model: 2SK1960-VB**
2SK1960-VB is a high-performance single N-channel MOSFET with SOT89 package type. This product adopts trench technology and has excellent voltage and current performance, suitable for low power density applications. Its main features include 30V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 6.8A continuous drain current (ID). In addition, it has a low on-resistance (RDS(ON)) at different gate-source voltages, which are 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V respectively.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | 30mΩ | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### Detailed parameter description
| Parameter| Value|
| --------------| ------------------ |
| Model| 2SK1960-VB |
| Package type| SOT89 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS)| 30V |
| Gate-source voltage (VGS)| ±20V |
| Threshold voltage (Vth)| 1.7V |
| On-resistance (RDS(ON))| 30mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V |
| Continuous drain current (ID)| 6.8A |
| Technology| Channel|
Domain and module applications：
### Applications and Module Examples
**Applications:**
1. **Power Management:**
2SK1960-VB can be used in power management systems with low power density, such as low power DC-DC converters and small chargers. Its high drain-source voltage capability and low on-resistance ensure power conversion efficiency and reliability.
2. **LED Lighting:**
In low power LED lighting systems, this MOSFET can be used in LED driver circuits. Its high current handling capability and stable performance enable it to meet the high brightness and long life requirements of LEDs.
**Module Examples:**
1. **Power Switch Module:**
2SK1960-VB can be integrated into low power power switch modules for switching and controlling low power circuits. Its 30V drain-source voltage and low on-resistance ensure high efficiency and low loss of the module.
2. **LED driver module: **
2SK1960-VB can be used to design low-power LED driver circuits, especially in situations where high efficiency and stable performance are required. Its stable performance and high current handling capability enable it to drive low-power LEDs and ensure their long life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
