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2SK1959-VB Product details
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### 2SK1959-VB MOSFET Product Introduction
2SK1959-VB is a high-performance, single-channel N-type MOSFET in SOT89 package, suitable for low-voltage, medium-power applications. Its main features include 30V drain-source voltage (VDS), 6.8A drain current (ID), and on-resistance (RDS(ON)) at different gate-source voltages: 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V. This product is manufactured using trench technology and has excellent conduction characteristics and medium power capabilities.
2SK1959-VB is a high-performance, single-channel N-type MOSFET in SOT89 package, suitable for low-voltage, medium-power applications. Its main features include 30V drain-source voltage (VDS), 6.8A drain current (ID), and on-resistance (RDS(ON)) at different gate-source voltages: 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V. This product is manufactured using trench technology and has excellent conduction characteristics and medium power capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | 30mΩ | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### 2SK1959-VB Detailed parameter description
- **Package type**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology**: Trench technology
- **Package type**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology**: Trench technology
Domain and module applications：
### Applications and Module Examples
The 2SK1959-VB MOSFET is suitable for the following low-voltage, medium-power applications and modules:
1. **Power Management**: Due to its low on-resistance and medium current handling capability, the 2SK1959-VB can be used in low-voltage power management modules to provide stable power output and efficient energy conversion.
2. **Motor Control**: In motor control applications that require medium power and medium current, this MOSFET can be used as a key switching element in the motor driver, providing stable high current output and low loss characteristics.
3. **Lighting Control**: The 2SK1959-VB can be used in driver modules in LED lighting systems to support stable current control and efficient energy conversion.
4. **Battery Charge and Discharge Management**: In low-voltage battery management systems, this MOSFET can be used in charge and discharge control modules to support stable management of battery charging and discharging.
5. **Portable devices**: Due to its small package and medium power characteristics, 2SK1959-VB can be used in power management and control modules in portable devices to support high-efficiency operation of the equipment.
In summary, 2SK1959-VB MOSFET has a wide range of low-voltage, medium-power applications and can meet the needs of various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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