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2SK1920-TL-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SK1920-TL-VB**
2SK1920-TL-VB is a high-performance single N-channel MOSFET with TO252 package type. This product adopts trench technology and has excellent voltage and current performance, suitable for medium power density applications. Its main features include 250V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 17A continuous drain current (ID). In addition, it has a low on-resistance (RDS(ON)) performance at high gate-source voltage, which is 176mΩ@VGS=10V.
**Model: 2SK1920-TL-VB**
2SK1920-TL-VB is a high-performance single N-channel MOSFET with TO252 package type. This product adopts trench technology and has excellent voltage and current performance, suitable for medium power density applications. Its main features include 250V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 17A continuous drain current (ID). In addition, it has a low on-resistance (RDS(ON)) performance at high gate-source voltage, which is 176mΩ@VGS=10V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
| Parameter| Value|
| --------------| ------------------ |
| Model| 2SK1920-TL-VB |
| Package type| TO252 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS)| 250V |
| Gate-source voltage (VGS)| ±20V |
| Threshold voltage (Vth)| 3.5V |
| On-resistance (RDS(ON))| 176mΩ @ VGS=10V |
| Continuous drain current (ID)| 17A |
| Technology| Channel|
Domain and module applications：
### Applications and Module Examples
**Applications:**
1. **Power Management:**
2SK1920-TL-VB can be used in power management systems with medium power density, such as medium power DC-DC converters and AC-DC power adapters. Its high drain-source voltage capability and low on-resistance ensure power conversion efficiency and reliability.
2. **Industrial Control:**
In industrial automation and control systems, 2SK1920-TL-VB can be used in medium power motor drive and protection circuits. Its high withstand voltage characteristics and stable current handling capability enable it to operate reliably for a long time in harsh environments.
3. **Lighting Applications:**
In lighting systems, this MOSFET can be used in LED drive circuits. Its high current handling capability and stable performance enable it to meet the high brightness and long life requirements of LEDs.
**Module examples: **
1. **Power switch module: **
2SK1920-TL-VB can be integrated into medium-power power switch modules for switching and controlling medium-power circuits. Its 250V drain-source voltage and low on-resistance ensure high efficiency and low loss of the module.
2. **Motor drive module: **
In medium-power motor drive circuits, this MOSFET can be used to control the start and stop and speed regulation of the motor. Its high current handling capability and stable performance enable it to meet the high efficiency requirements of the motor.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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