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2SK1916-01R-VB Product details
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### 2SK1916-01R-VB MOSFET Product Introduction
2SK1916-01R-VB is a high-performance, single-channel N-type MOSFET in TO220F package, suitable for medium-voltage, high-power applications. Its main features include 550V drain-source voltage (VDS), 18A drain current (ID), and on-resistance (RDS(ON)) at different gate-source voltages: 260mΩ@VGS=10V. This product is manufactured using planar structure (Plannar) technology and has excellent conduction characteristics and high power capability.
2SK1916-01R-VB is a high-performance, single-channel N-type MOSFET in TO220F package, suitable for medium-voltage, high-power applications. Its main features include 550V drain-source voltage (VDS), 18A drain current (ID), and on-resistance (RDS(ON)) at different gate-source voltages: 260mΩ@VGS=10V. This product is manufactured using planar structure (Plannar) technology and has excellent conduction characteristics and high power capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2SK1916-01R-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Planar structure (Plannar)
- **Package type**: TO220F
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Planar structure (Plannar)
Domain and module applications：
### Applications and Module Examples
2SK1916-01R-VB MOSFET is suitable for the following medium-high voltage, high power applications and modules:
1. **Power Converter**: Due to its high drain-source voltage and high drain current capability, 2SK1916-01R-VB can be used as the main switch device in high-voltage switch-mode power supplies (SMPS), supporting energy-efficient conversion and stable power output of high-power equipment.
2. **Industrial Power Equipment**: This MOSFET is suitable for power switches and control modules in industrial power equipment to ensure stable operation of equipment under high load and high efficiency requirements, such as high-voltage DC transmission equipment.
3. **Electric Vehicle Charging Pile**: In electric vehicle charging piles, 2SK1916-01R-VB can be used in the power management and power control modules of high-voltage charging piles, supporting efficient charging process and power conversion.
4. **Solar Inverter**: In solar power generation systems, 2SK1916-01R-VB can be used in inverter modules to handle the conversion of DC to AC, supporting efficient energy conversion and system stability.
5. **High-Voltage DC Transmission**: Due to its high drain-source voltage and low on-resistance, this MOSFET can be used in switch control modules in high-voltage DC transmission systems, supporting efficient power transmission and stable system operation.
In summary, 2SK1916-01R-VB MOSFET has a wide range of applications, especially in medium-high voltage and high power handling applications, and can meet the needs of various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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