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2SK1905-VB Product details
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### 2SK1905-VB Product Introduction
2SK1905-VB is a single N-channel MOSFET produced by VBsemi in TO220F package, suitable for medium voltage and high power applications. This model has low on-resistance and high current capacity, suitable for a variety of electronic devices and modules. Its main features include 100V drain-source voltage (VDS), 86mΩ@VGS=10V on-resistance (RDS(ON)), 18A continuous drain current (ID) and 1.8V threshold voltage (Vth). These characteristics make it suitable for high-power application scenarios such as switching power supplies (SMPS), battery protection, motor drives and inverters.
2SK1905-VB is a single N-channel MOSFET produced by VBsemi in TO220F package, suitable for medium voltage and high power applications. This model has low on-resistance and high current capacity, suitable for a variety of electronic devices and modules. Its main features include 100V drain-source voltage (VDS), 86mΩ@VGS=10V on-resistance (RDS(ON)), 18A continuous drain current (ID) and 1.8V threshold voltage (Vth). These characteristics make it suitable for high-power application scenarios such as switching power supplies (SMPS), battery protection, motor drives and inverters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
| Parameter| Value| Unit|
|-------------|-------------------------|------|
| Package type| TO220F | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 100 | V |
| Gate-source voltage (VGS) | 20 (±) | V |
| Threshold voltage (Vth) | 1.8 | V |
| On-resistance (RDS(ON)) @ VGS=10V | 86 | mΩ |
| Drain current (ID) | 18 | A |
| Technology| Channel| |
| Parameter| Value| Unit|
|-------------|-------------------------|------|
| Package type| TO220F | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 100 | V |
| Gate-source voltage (VGS) | 20 (±) | V |
| Threshold voltage (Vth) | 1.8 | V |
| On-resistance (RDS(ON)) @ VGS=10V | 86 | mΩ |
| Drain current (ID) | 18 | A |
| Technology| Channel| |
Domain and module applications：
### Application fields and module examples
2SK1905-VB MOSFET is suitable for a variety of fields and modules, mainly including the following aspects:
1. **Switching Power Supply (SMPS)**: In high-power switching power supplies, the high current capacity and low on-resistance characteristics of 2SK1905-VB make it a high-efficiency switching element, which helps to improve power conversion efficiency and reduce power loss.
2. **Battery Protection**: In circuits that need to protect batteries from overcurrent and overvoltage, this model can be used as a protection switch to ensure that the battery is in a safe state.
3. **Motor Drive**: Due to its high current capacity, 2SK1905-VB can be used as a switch or regulator in high-power motor drive circuits to provide stable current output.
4. **Inverter**: In high power inverters, the voltage capability and low on-resistance of the 2SK1905-VB help improve the overall performance and reliability of the system.
These examples demonstrate the flexibility and usefulness of the 2SK1905-VB in high power applications, making it an ideal choice for many designers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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