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2SK1869L-VB Product details
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### Product Introduction Details
2SK1869L-VB is a high performance single N-channel power MOSFET, using SJ_Multi-EPI technology, with excellent high voltage withstand capability and low on-resistance. It is designed for high voltage, medium power applications such as power converters, lighting systems and electric vehicle control, with high reliability and stability. This model is packaged in TO252, suitable for compact circuit board design.
2SK1869L-VB is a high performance single N-channel power MOSFET, using SJ_Multi-EPI technology, with excellent high voltage withstand capability and low on-resistance. It is designed for high voltage, medium power applications such as power converters, lighting systems and electric vehicle control, with high reliability and stability. This model is packaged in TO252, suitable for compact circuit board design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
### Application fields and module examples
2SK1869L-VB power MOSFET is suitable for multiple fields and modules. Here are some specific application examples:
1. **Power converter**:
In switch-mode power converters, it can be used for efficient power switches, reduce conduction losses, and improve overall system efficiency.
2. **Lighting system**:
Suitable for high-voltage switches in LED lighting systems, providing stable lighting effects through high reliability and low on-resistance.
3. **Electric vehicle control**:
In the motor control system of electric vehicles, it can be used for power inverters and motor drivers to provide efficient power conversion and reliable power output.
4. **Industrial power supply**:
Used in high-voltage power management modules in industrial equipment and machinery to ensure stable operation and efficient energy consumption of equipment.
In summary, 2SK1869L-VB has broad application potential in high voltage and medium power applications. Its high performance and reliability provide a reliable solution for various circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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