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2SK1838S-VB Product details
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### 2SK1838S-VB MOSFET Product Introduction
The 2SK1838S-VB is a high-performance, single-channel N-type MOSFET in a TO252 package for medium power and medium current applications. Its main features include a drain-source voltage (VDS) of 250V, a drain current (ID) of 4.5A, and an on-resistance (RDS(ON)) of 640mΩ@VGS=10V at different gate-source voltages. This product is manufactured using trench technology and has excellent conduction characteristics and medium power capabilities.
The 2SK1838S-VB is a high-performance, single-channel N-type MOSFET in a TO252 package for medium power and medium current applications. Its main features include a drain-source voltage (VDS) of 250V, a drain current (ID) of 4.5A, and an on-resistance (RDS(ON)) of 640mΩ@VGS=10V at different gate-source voltages. This product is manufactured using trench technology and has excellent conduction characteristics and medium power capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2SK1838S-VB Detailed Parameters
- **Package Type**: TO252
- **Configuration**: Single N-channel
- **Drain-Source Voltage(VDS)**: 250V
- **Gate-Source Voltage(VGS)**: ±20V
- **Gate Threshold Voltage(Vth)**: 3V
- **On-Resistance(RDS(ON))**: 640mΩ @ VGS=10V
- **Drain Current(ID)**: 4.5A
- **Technology**: Trench Technology
- **Package Type**: TO252
- **Configuration**: Single N-channel
- **Drain-Source Voltage(VDS)**: 250V
- **Gate-Source Voltage(VGS)**: ±20V
- **Gate Threshold Voltage(Vth)**: 3V
- **On-Resistance(RDS(ON))**: 640mΩ @ VGS=10V
- **Drain Current(ID)**: 4.5A
- **Technology**: Trench Technology
Domain and module applications：
### Applications and Module Examples
The 2SK1838S-VB MOSFET is suitable for the following medium-power, medium-current applications and modules:
1. **Power Converter**: Due to its medium power and medium current handling capabilities, the 2SK1838S-VB can be used as the main switching device in a switching power supply (SMPS), supporting energy-efficient conversion and stable power output for medium-power devices.
2. **Motor Control**: In motor control applications that require medium power and medium current, this MOSFET can be used as a key switching element in the motor driver, providing stable high-current output and low-loss characteristics.
3. **Industrial Power Equipment**: This MOSFET is suitable for power switches and control modules in industrial power equipment, ensuring stable operation of the equipment under high load and high efficiency requirements.
4. **LED lighting**: In medium-power LED lighting systems, 2SK1838S-VB can be used in LED driver modules to provide stable current control and efficient energy conversion.
5. **Automotive electronics**: In the field of automotive electronics, this MOSFET can be used in power management and drive modules in automotive electronic systems to support efficient operation of automotive electronic equipment.
In summary, 2SK1838S-VB MOSFET has a wide range of applications, especially for medium-power and medium-current handling occasions, and can meet the needs of various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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