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2SK1821-01MR-VB Product details
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### 2SK1821-01MR-VB MOSFET Product Introduction
The 2SK1821-01MR-VB is a high voltage, single channel N-type MOSFET in a TO220F package suitable for medium power and medium current applications. Its main features include a drain-source voltage (VDS) of 650V, a drain current (ID) of 2A, and an on-resistance (RDS(ON)) of 1700mΩ@VGS=10V at different gate-source voltages. The product is manufactured using planar technology and has good conduction characteristics and medium power capabilities.
The 2SK1821-01MR-VB is a high voltage, single channel N-type MOSFET in a TO220F package suitable for medium power and medium current applications. Its main features include a drain-source voltage (VDS) of 650V, a drain current (ID) of 2A, and an on-resistance (RDS(ON)) of 1700mΩ@VGS=10V at different gate-source voltages. The product is manufactured using planar technology and has good conduction characteristics and medium power capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2SK1821-01MR-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
### Applications and Module Examples
The 2SK1821-01MR-VB MOSFET is suitable for the following medium-power, medium-current applications and modules:
1. **Power Converter**: Due to its medium power and medium current handling capabilities, the 2SK1821-01MR-VB can be used as the main switching device in a switch mode power supply (SMPS), supporting energy-efficient conversion and stable power output for medium-power devices.
2. **Motor Control**: In motor control applications that require medium power and medium current, this MOSFET can be used as a key switching element in the motor driver, providing stable high current output and low loss characteristics.
3. **Battery Charge and Discharge Management**: The 2SK1821-01MR-VB can be used in the charge and discharge control module in the battery management system, supporting stable management of battery charging and discharging.
4. **Solar Inverter**: In solar power generation systems, 2SK1821-01MR-VB can be used in inverter modules to handle the conversion of DC to AC, supporting efficient energy conversion and system stability.
5. **LED Lighting**: 2SK1821-01MR-VB can be used in driver modules in medium-power LED lighting systems to provide stable current control and efficient energy conversion.
In summary, 2SK1821-01MR-VB MOSFET has a wide range of applications, especially for medium-power, medium-current handling capabilities, and can meet the needs of various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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