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2SK1748-Z-E1-VB Product details
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### 2SK1748-Z-E1-VB MOSFET Product Introduction
The 2SK1748-Z-E1-VB is a high-performance, single-channel N-type MOSFET in a TO252 package for medium power and medium current applications. Its main features include a drain-source voltage (VDS) of 60V, a drain current (ID) of 18A, and an on-resistance (RDS(ON)) of 85mΩ@VGS=4.5V and 73mΩ@VGS=10V at different gate-source voltages. This product is manufactured using trench technology and has excellent conduction characteristics and medium power capabilities.
The 2SK1748-Z-E1-VB is a high-performance, single-channel N-type MOSFET in a TO252 package for medium power and medium current applications. Its main features include a drain-source voltage (VDS) of 60V, a drain current (ID) of 18A, and an on-resistance (RDS(ON)) of 85mΩ@VGS=4.5V and 73mΩ@VGS=10V at different gate-source voltages. This product is manufactured using trench technology and has excellent conduction characteristics and medium power capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | 85mΩ | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2SK1748-Z-E1-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench technology
Domain and module applications：
### Applications and Module Examples
The 2SK1748-Z-E1-VB MOSFET is suitable for the following medium-power, medium-current applications and modules:
1. **Power Converter**: Due to its medium power and medium current handling capabilities, the 2SK1748-Z-E1-VB can be used as the main switching device in a switch mode power supply (SMPS), supporting energy-efficient conversion and stable power output for medium-power devices.
2. **Motor Control**: In motor control applications that require medium power and medium current, this MOSFET can be used as a key switching element in the motor driver, providing stable high current output and low loss characteristics.
3. **Battery Charge and Discharge Management**: The 2SK1748-Z-E1-VB can be used in the charge and discharge control module in the battery management system, supporting stable management of battery charging and discharging.
4. **Automotive electronics**: In the field of automotive electronics, this MOSFET can be used for power management and driver modules in automotive electronic systems to support efficient operation of automotive electronic equipment.
5. **LED lighting**: 2SK1748-Z-E1-VB can be used for driver modules in medium-power LED lighting systems to provide stable current control and efficient energy conversion.
In summary, 2SK1748-Z-E1-VB MOSFET has a wide range of applications, especially for medium-power and medium-current handling applications, and can meet the needs of various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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