Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
700V |
30（±V） |
3.5V |
20A |
|
|
210 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBP17R20S
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 210m次
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications：
Application example:
The product is suitable for multiple areas and modules, such as:
- Industrial power module: can be used for power management and control of industrial equipment, including frequency converters, machine tools, and welding equipment.
- Solar inverter: suitable for inverter modules in solar power generation systems to achieve DC to AC conversion control.
- Electric vehicle charging pile: used for power switching and current regulation in electric vehicle charging equipment to ensure a safe and stable charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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