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2SK1657-T2B-A-VB Product details
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### 2SK1657-T2B-A-VB MOSFET Product Introduction
The 2SK1657-T2B-A-VB is a high-performance, single-channel N-type MOSFET in a SOT23-3 package for low-power and low-current applications. Its main features include a drain-source voltage (VDS) of 60V, a drain current (ID) of 0.3A, and an on-resistance (RDS(ON)) of 3100mΩ@VGS=4.5V and 2800mΩ@VGS=10V at different gate-source voltages. This product is manufactured using trench technology and is suitable for applications requiring low power and high-voltage stability.
The 2SK1657-T2B-A-VB is a high-performance, single-channel N-type MOSFET in a SOT23-3 package for low-power and low-current applications. Its main features include a drain-source voltage (VDS) of 60V, a drain current (ID) of 0.3A, and an on-resistance (RDS(ON)) of 3100mΩ@VGS=4.5V and 2800mΩ@VGS=10V at different gate-source voltages. This product is manufactured using trench technology and is suitable for applications requiring low power and high-voltage stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### 2SK1657-T2B-A-VB Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench technology
Domain and module applications：
### Applications and Module Examples
2SK1657-T2B-A-VB MOSFET is suitable for the following low-power, high-voltage applications and modules:
1. **Sensor Interface**: Due to its low power and high-voltage stability, 2SK1657-T2B-A-VB can be used in sensor interface circuits to provide stable voltage protection and low-power control.
2. **Battery Management**: In battery management systems that require high-voltage protection, this MOSFET can be used for overvoltage protection and low-power control to extend battery life and ensure battery safety.
3. **LED Lighting**: In low-power LED lighting systems, 2SK1657-T2B-A-VB can be used in LED driver modules to provide stable current control and efficient energy conversion.
4. **Portable devices**: Due to its small package and low power characteristics, this MOSFET can be used in power management and circuit control modules in portable devices to extend battery life and improve device efficiency.
5. **Medical devices**: In low-power medical devices, the 2SK1657-T2B-A-VB can be used in power management and circuit control modules to provide reliable voltage stability and low power consumption.
In summary, the 2SK1657-T2B-A-VB MOSFET has a wide range of application prospects in various low-power, high-voltage applications, can meet the needs of a variety of fields, and is particularly suitable for occasions that require high voltage stability and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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