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2SK1625S-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK1625S-VB is a high-performance single N-channel power MOSFET that uses SJ_Multi-EPI technology and has excellent high-voltage withstand capability and low on-resistance. This model is packaged in TO252 and is suitable for medium and high voltage applications such as power converters, lighting systems and electric vehicle control, with high reliability and stability.
2SK1625S-VB is a high-performance single N-channel power MOSFET that uses SJ_Multi-EPI technology and has excellent high-voltage withstand capability and low on-resistance. This model is packaged in TO252 and is suitable for medium and high voltage applications such as power converters, lighting systems and electric vehicle control, with high reliability and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
### Application fields and module examples
2SK1625S-VB power MOSFET is suitable for many fields and modules. Here are some specific application examples:
1. **Power converter**:
In switch mode power converter, it can be used for power switch with high energy consumption to ensure stable output under high voltage conditions.
2. **Lighting system**:
Suitable for high voltage switch in LED lighting system, providing stable lighting effect through high reliability and low on-resistance.
3. **Electric vehicle control**:
In the motor control system of electric vehicles, it can be used for power inverter and motor driver to provide efficient power conversion and reliable power output.
4. **Industrial power supply**:
Used in high voltage power management module in industrial equipment and machinery to ensure stable operation and high energy consumption of equipment.
In summary, 2SK1625S-VB has wide application potential in medium and high voltage applications, and its high performance and stability provide a reliable solution for various circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
