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2SK1620L-VB Product details
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### 2SK1620L-VB Product Introduction
2SK1620L-VB is a single N-channel MOSFET produced by VBsemi in TO251 package, suitable for high voltage and high power applications. This model has low on-resistance and high current capacity, suitable for a variety of industrial and consumer electronic devices. Its main features include 200V drain-source voltage (VDS), 56mΩ@VGS=10V on-resistance (RDS(ON)), 25A continuous drain current (ID) and 3V threshold voltage (Vth). These features make it ideal for high-power application scenarios such as switching power supplies (SMPS), motor drives, battery protection and inverters.
2SK1620L-VB is a single N-channel MOSFET produced by VBsemi in TO251 package, suitable for high voltage and high power applications. This model has low on-resistance and high current capacity, suitable for a variety of industrial and consumer electronic devices. Its main features include 200V drain-source voltage (VDS), 56mΩ@VGS=10V on-resistance (RDS(ON)), 25A continuous drain current (ID) and 3V threshold voltage (Vth). These features make it ideal for high-power application scenarios such as switching power supplies (SMPS), motor drives, battery protection and inverters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 200V | 3V | 25A | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 200V | 3V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 200V | 3V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Detailed parameter description
| Parameter| Value| Unit|
|-------------|-------------------------|------|
| Package type| TO251 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 200 | V |
| Gate-source voltage (VGS) | 20 (±) | V |
| Threshold voltage (Vth) | 3 | V |
| On-resistance (RDS(ON)) @ VGS=10V | 56 | mΩ |
| Drain current (ID) | 25 | A |
| Technology| Channel| |
Domain and module applications：
### Application Fields and Module Examples
2SK1620L-VB MOSFET is suitable for multiple fields and modules, mainly including the following aspects:
1. **Switching Power Supply (SMPS)**: In high-power switching power supplies, the high voltage and low on-resistance characteristics of 2SK1620L-VB make it a high-efficiency switching element, which helps to improve power conversion efficiency and reduce power loss.
2. **Motor Drive**: Due to its high current handling capability, 2SK1620L-VB is very suitable for high-power motor drive circuits, especially in industrial and household appliances that require high efficiency and high reliability.
3. **Battery Protection Circuit**: In battery management systems, this MOSFET can be used as a high-power switch to ensure that the battery is not affected by overcurrent and overvoltage during charging and discharging, extending battery life and improving safety.
4. **Inverter**: In high power inverters, the high voltage capability and low on-resistance of the 2SK1620L-VB help improve the overall performance and reliability of the system.
These examples show the important role of the 2SK1620L-VB in high power applications, where its high performance and reliability make it one of the preferred components for many engineers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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