2SK1591-VB Product details
Product introduction:
2SK1591-VB is a high voltage, single channel N-type MOSFET in SOT23-3 package, suitable for low power and low current applications. Its main features include 100V drain-source voltage (VDS), 0.26A drain current (ID), and on-resistance (RDS(ON)) at different gate-source voltages: 3000mΩ@VGS=4.5V and 2800mΩ@VGS=10V. This product is manufactured using trench technology and is suitable for applications requiring high voltage stability and low power consumption.
### 2SK1591-VB Detailed Parameters
- **Package Type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.5V
- **On-Resistance (RDS(ON))**:
- 3000mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain Current (ID)**: 0.26A
- **Technology**: Trench Technology
### Applications and Module Examples
2SK1591-VB MOSFET is suitable for the following low-power, high-voltage applications and modules:
1. **Mobile phone charging protection**: Due to its high voltage stability and low power consumption characteristics, 2SK1591-VB can be used in mobile phone charging protection circuits to ensure safe charging between batteries and chargers.
2. **Battery management**: In battery management systems that require high voltage protection, this MOSFET can be used for overvoltage protection and low power consumption control to extend battery life and ensure battery safety.
3. **LED lighting**: In low-power LED lighting systems, 2SK1591-VB can be used in LED driver modules to provide stable current control and efficient energy conversion.
4. **Sensor interface**: This MOSFET can be used in sensor interface circuits to provide stable voltage protection and low power consumption control to ensure stable operation of sensor systems.
5. **Medical equipment**: In low-power medical equipment, 2SK1591-VB can be used in power management and circuit control modules to provide reliable voltage stability and low power consumption characteristics.
In summary, 2SK1591-VB MOSFET has broad application prospects in various low-power, high-voltage applications and can meet the needs of various fields. It is particularly suitable for occasions that require high-voltage stability and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | 3000mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
Domain and module applications:
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