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2SK1591-VB Product details

Product introduction:

### 2SK1591-VB MOSFET Product Introduction

2SK1591-VB is a high voltage, single channel N-type MOSFET in SOT23-3 package, suitable for low power and low current applications. Its main features include 100V drain-source voltage (VDS), 0.26A drain current (ID), and on-resistance (RDS(ON)) at different gate-source voltages: 3000mΩ@VGS=4.5V and 2800mΩ@VGS=10V. This product is manufactured using trench technology and is suitable for applications requiring high voltage stability and low power consumption.

### 2SK1591-VB Detailed Parameters

- **Package Type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.5V
- **On-Resistance (RDS(ON))**:
- 3000mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain Current (ID)**: 0.26A
- **Technology**: Trench Technology
### Applications and Module Examples

2SK1591-VB MOSFET is suitable for the following low-power, high-voltage applications and modules:

1. **Mobile phone charging protection**: Due to its high voltage stability and low power consumption characteristics, 2SK1591-VB can be used in mobile phone charging protection circuits to ensure safe charging between batteries and chargers.

2. **Battery management**: In battery management systems that require high voltage protection, this MOSFET can be used for overvoltage protection and low power consumption control to extend battery life and ensure battery safety.

3. **LED lighting**: In low-power LED lighting systems, 2SK1591-VB can be used in LED driver modules to provide stable current control and efficient energy conversion.

4. **Sensor interface**: This MOSFET can be used in sensor interface circuits to provide stable voltage protection and low power consumption control to ensure stable operation of sensor systems.

5. **Medical equipment**: In low-power medical equipment, 2SK1591-VB can be used in power management and circuit control modules to provide reliable voltage stability and low power consumption characteristics.

In summary, 2SK1591-VB MOSFET has broad application prospects in various low-power, high-voltage applications and can meet the needs of various fields. It is particularly suitable for occasions that require high-voltage stability and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 100V 20(±V) 1.5V 0.26A 3000mΩ 2800mΩ

Domain and module applications:

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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