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2SK1591-T1B-A-VB Product details
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### 2SK1591-T1B-A-VB Product Introduction
2SK1591-T1B-A-VB is a single N-channel MOSFET produced by VBsemi in SOT23-3 package, suitable for low power and medium and low voltage applications. This model has low drain-source voltage and moderate on-resistance, suitable for a variety of electronic devices and modules. Its main features include 100V drain-source voltage (VDS), 3000mΩ@VGS=4.5V and 2800mΩ@VGS=10V on-resistance (RDS(ON)), 0.26A continuous drain current (ID) and 1.5V threshold voltage (Vth). These characteristics make it suitable for applications such as low power switching, power management and signal amplification.
2SK1591-T1B-A-VB is a single N-channel MOSFET produced by VBsemi in SOT23-3 package, suitable for low power and medium and low voltage applications. This model has low drain-source voltage and moderate on-resistance, suitable for a variety of electronic devices and modules. Its main features include 100V drain-source voltage (VDS), 3000mΩ@VGS=4.5V and 2800mΩ@VGS=10V on-resistance (RDS(ON)), 0.26A continuous drain current (ID) and 1.5V threshold voltage (Vth). These characteristics make it suitable for applications such as low power switching, power management and signal amplification.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | 3000mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed parameter description
| Parameter| Value| Unit|
|-------------|-------------------------|------|
| Package type| SOT23-3 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 100 | V |
| Gate-source voltage (VGS) | 20 (±) | V |
| Threshold voltage (Vth) | 1.5 | V |
| On-resistance (RDS(ON)) @ VGS=4.5V | 3000 | mΩ |
| On-resistance (RDS(ON)) @ VGS=10V | 2800 | mΩ |
| Drain current (ID) | 0.26 | A |
| Technology| Channel| |
Domain and module applications：
### Application Fields and Module Examples
2SK1591-T1B-A-VB MOSFET is suitable for multiple fields and modules, mainly including the following aspects:
1. **Low Power Switch**: In the switching circuit that needs to control low power devices, such as LED light control, small motor drive, etc., the low threshold voltage and low drain-source voltage characteristics of 2SK1591-T1B-A-VB are very suitable.
2. **Power Management**: In low voltage power management, such as portable devices and battery-powered systems, this model can be used as a switch or regulator to provide stable power output.
3. **Signal Amplification**: In the circuit that needs to amplify the signal, 2SK1591-T1B-A-VB can be used as a key component of the signal amplifier to provide stable signal amplification function.
4. **Battery Protection**: In circuits that need to protect batteries from overcurrent and overvoltage, this model can be used as a protection switch to ensure that the battery is in a safe state.
These examples demonstrate the flexibility and practicality of the 2SK1591-T1B-A-VB in a variety of low-power and low-voltage applications, making it an ideal choice for many designers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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