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2SK1589-T1B-VB Product details
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### Product Introduction Details
**Model: 2SK1589-T1B-VB**
2SK1589-T1B-VB is a low voltage single N-channel MOSFET in SOT23-3 package. The device is designed for low power applications and can operate stably at low voltages of 100V, making it suitable for portable devices and small electronic modules.
**Model: 2SK1589-T1B-VB**
2SK1589-T1B-VB is a low voltage single N-channel MOSFET in SOT23-3 package. The device is designed for low power applications and can operate stably at low voltages of 100V, making it suitable for portable devices and small electronic modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | 3000mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 100V | 1.5V | 0.26A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK1589-T1B-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**: 3000mΩ @ VGS=4.5V; 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.26A
- **Technology**: Trench structure
- **Model**: 2SK1589-T1B-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**: 3000mΩ @ VGS=4.5V; 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.26A
- **Technology**: Trench structure
Domain and module applications：
### Applications and Module Examples
2SK1589-T1B-VB This low voltage single N-channel MOSFET is suitable for many low power applications, here are some specific examples:
1. **Portable devices**:
- **Smart phones and tablets**: In these devices, 2SK1589-T1B-VB can be used for power management, signal amplification and other low power circuits.
- **Portable audio devices**: In headphone amplifiers and audio control circuits, this MOSFET can provide reliable performance.
2. **Medical equipment**:
- **Portable monitoring equipment**: In portable medical monitoring equipment, 2SK1589-T1B-VB can be used for power management and signal processing circuits.
- **Medical imaging equipment**: In some low power imaging equipment, this MOSFET can be used for signal amplification and transmission.
3. **Portable lighting**:
- **LED flashlights and lighting equipment**: In low-power LED lighting equipment, this MOSFET can be used for power management and LED control.
4. **Sensors and controllers**:
- **Environmental sensors**: In various environmental sensors, 2SK1589-T1B-VB can be used for signal amplification and transmission.
- **Small motor controller**: In some small motor control circuits, this MOSFET can be used for driving and control.
Through these application examples, it can be seen that 2SK1589-T1B-VB has a wide range of application prospects in electronic applications with low voltage and low power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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