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2SK1585-VB Product details
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### Product Introduction
**Model: 2SK1585-VB**
2SK1585-VB is a high-performance single N-channel MOSFET with SOT89 package type. This product adopts advanced channel technology and has excellent voltage and current performance, which is very suitable for low-voltage and high-power density applications. Its main features include 30V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 6.8A continuous drain current (ID). In addition, it has a low on-resistance (RDS(ON)) at different gate-source voltages, which are 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V respectively.
### Detailed parameter description
| Parameter| Value|
| --------------| ------------------ |
| Model| 2SK1585-VB |
| Package type| SOT89 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS)| 30V |
| Gate-source voltage (VGS)| ±20V |
| Threshold voltage (Vth)| 1.7V |
| On-resistance (RDS(ON))| 30mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V |
| Continuous drain current (ID)| 6.8A |
| Technology| Channel|
### Application areas and module examples
**Model: 2SK1585-VB**
2SK1585-VB is a high-performance single N-channel MOSFET with SOT89 package type. This product adopts advanced channel technology and has excellent voltage and current performance, which is very suitable for low-voltage and high-power density applications. Its main features include 30V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 6.8A continuous drain current (ID). In addition, it has a low on-resistance (RDS(ON)) at different gate-source voltages, which are 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V respectively.
### Detailed parameter description
| Parameter| Value|
| --------------| ------------------ |
| Model| 2SK1585-VB |
| Package type| SOT89 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS)| 30V |
| Gate-source voltage (VGS)| ±20V |
| Threshold voltage (Vth)| 1.7V |
| On-resistance (RDS(ON))| 30mΩ @ VGS=2.5V, 22mΩ @ VGS=4.5V |
| Continuous drain current (ID)| 6.8A |
| Technology| Channel|
### Application areas and module examples
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | 30mΩ | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
Domain and module applications：
**Application areas:**
1. **Power management:**
2SK1585-VB can be used in low-voltage power management systems, such as power management for mobile devices and small electronic products. Its low on-resistance and high current handling capability make it suitable for high power density applications.
2. **Battery management:**
In battery charge and discharge management circuits, this MOSFET can be used for battery protection and battery pack management. Its low threshold voltage and low on-resistance ensure precise control of battery voltage and low loss.
3. **Motor drive:**
In small motor drive circuits, 2SK1585-VB can be used to control the start and stop and speed regulation of the motor. Its high current handling capability and stable performance enable it to meet the high efficiency requirements of the motor.
**Module Examples: **
1. **Low Voltage Switch Module: **
2SK1585-VB can be integrated into low voltage switch modules for controlling and switching low voltage circuits. Its 30V drain-source voltage and low on-resistance ensure high efficiency and low losses of the module.
2. **Power Amplifier Module: **
In audio and RF power amplification applications, this MOSFET can be used as part of a power amplifier. Its high current handling capability and low on-resistance ensure high fidelity amplification of the signal.
3. **LED Driver Module: **
2SK1585-VB can be used to design LED driver circuits, especially where high power density and low energy consumption are required. Its stable performance and high current handling capability enable it to drive high brightness LEDs and ensure their long life operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
