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2SK1584-VB Product details
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### 2SK1584-VB MOSFET Product Introduction
2SK1584-VB is a high-performance, single-channel N-type MOSFET in SOT89 package, suitable for a variety of low-voltage, high-current applications. Its main features include 30V drain-source voltage (VDS), 6.8A drain current (ID), and low on-resistance (RDS(ON)) at different gate-source voltages: 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V. This product is manufactured using trench technology and has excellent conduction characteristics and high performance capabilities.
2SK1584-VB is a high-performance, single-channel N-type MOSFET in SOT89 package, suitable for a variety of low-voltage, high-current applications. Its main features include 30V drain-source voltage (VDS), 6.8A drain current (ID), and low on-resistance (RDS(ON)) at different gate-source voltages: 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V. This product is manufactured using trench technology and has excellent conduction characteristics and high performance capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | 30mΩ | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### 2SK1584-VB Detailed parameter description
- **Package type**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology**: Trench technology
- **Package type**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology**: Trench technology
Domain and module applications：
### Application Fields and Module Examples
2SK1584-VB MOSFET is suitable for various low voltage, high current applications, including but not limited to the following fields and modules:
1. **Power Management**: In low voltage power management, 2SK1584-VB can be used as the main switching device of the switch mode power supply (SMPS), supporting efficient power conversion and stable voltage output.
2. **Battery Management**: Due to its low on-resistance and high current handling capability, this MOSFET can be used in lithium battery management systems to provide efficient charge and discharge control and low-loss battery management.
3. **Automotive Electronics**: In the field of automotive electronics, 2SK1584-VB can be used for power management and drive modules in vehicle electronic systems, supporting efficient operation of automotive electronic equipment.
4. **Industrial Automation**: This MOSFET is suitable for power switches and control modules in industrial automation equipment to ensure stable operation of equipment under high load and high efficiency requirements.
5. **LED driver**: 2SK1584-VB can be used in the driver of low-voltage LED lamps to provide efficient current control and stable brightness output.
In summary, 2SK1584-VB MOSFET has a wide range of applications, especially in situations that require low voltage and high current handling capabilities, and can meet the needs of various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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