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2SK1583-VB Product details
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### 2SK1583-VB Product Introduction
2SK1583-VB is a single N-channel MOSFET produced by VBsemi in SOT89 package, suitable for low voltage and medium power applications. This model has low on-resistance and high current capacity, suitable for various electronic devices and modules. Its main features include 30V drain-source voltage (VDS), 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V on-resistance (RDS(ON)), 6.8A continuous drain current (ID) and 1.7V threshold voltage (Vth). These features make it ideal for battery management, power management and low power applications.
2SK1583-VB is a single N-channel MOSFET produced by VBsemi in SOT89 package, suitable for low voltage and medium power applications. This model has low on-resistance and high current capacity, suitable for various electronic devices and modules. Its main features include 30V drain-source voltage (VDS), 30mΩ@VGS=2.5V and 22mΩ@VGS=4.5V on-resistance (RDS(ON)), 6.8A continuous drain current (ID) and 1.7V threshold voltage (Vth). These features make it ideal for battery management, power management and low power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | 30mΩ | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N-Channel |
### Detailed parameter description
| Parameter| Value| Unit|
|-------------|-------------------------|------|
| Package type| SOT89 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | 20 (±) | V |
| Threshold voltage (Vth) | 1.7 | V |
| On-resistance (RDS(ON)) @ VGS=2.5V | 30 | mΩ |
| On-resistance (RDS(ON)) @ VGS=4.5V | 22 | mΩ |
| Drain current (ID) | 6.8 | A |
| Technology| Channel| |
| Parameter| Value| Unit|
|-------------|-------------------------|------|
| Package type| SOT89 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | 20 (±) | V |
| Threshold voltage (Vth) | 1.7 | V |
| On-resistance (RDS(ON)) @ VGS=2.5V | 30 | mΩ |
| On-resistance (RDS(ON)) @ VGS=4.5V | 22 | mΩ |
| Drain current (ID) | 6.8 | A |
| Technology| Channel| |
Domain and module applications：
### Applications and Module Examples
The 2SK1583-VB MOSFET is suitable for a variety of applications and modules, including the following:
1. **Battery Management**: In mobile devices and portable electronics, the 2SK1583-VB can be used in battery protection circuits to ensure that the battery is in a safe state during charging and discharging.
2. **Power Management**: In low-voltage and medium-power applications, such as power converters and regulators, the low on-resistance and high current capacity of the 2SK1583-VB help improve energy efficiency and reduce power consumption.
3. **Low-Power Applications**: Due to its low threshold voltage and low on-resistance, the 2SK1583-VB is suitable for applications with strict power consumption requirements, such as portable medical devices and sensors.
4. **Power Switch**: In low-voltage power switches, this model can achieve fast switching and low losses, improving system efficiency and performance.
These examples demonstrate the flexibility and versatility of the 2SK1583-VB in a variety of applications, making it one of the preferred components for many designers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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