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2SK1572-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SK1572-VB**
2SK1572-VB is a high-performance single N-channel MOSFET with TO220F package type. This product adopts advanced planar technology and has excellent voltage and current performance, making it ideal for various high-voltage applications. Its main features include 650V drain-source voltage (VDS), ±30V gate-source voltage (VGS), and 2A continuous drain current (ID). In addition, it has a low on-resistance (RDS(ON)=1700mΩ@VGS=10V), making it excel in high performance and high reliability.
**Model: 2SK1572-VB**
2SK1572-VB is a high-performance single N-channel MOSFET with TO220F package type. This product adopts advanced planar technology and has excellent voltage and current performance, making it ideal for various high-voltage applications. Its main features include 650V drain-source voltage (VDS), ±30V gate-source voltage (VGS), and 2A continuous drain current (ID). In addition, it has a low on-resistance (RDS(ON)=1700mΩ@VGS=10V), making it excel in high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
| Parameter| Value|
| --------------| ------------------ |
| Model| 2SK1572-VB |
| Package type| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS)| 650V |
| Gate-source voltage (VGS)| ±30V |
| Threshold voltage (Vth)| 3.5V |
| On-resistance (RDS(ON))| 1700mΩ @ VGS=10V |
| Continuous drain current (ID)| 2A |
| Technology| Planar|
| Parameter| Value|
| --------------| ------------------ |
| Model| 2SK1572-VB |
| Package type| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS)| 650V |
| Gate-source voltage (VGS)| ±30V |
| Threshold voltage (Vth)| 3.5V |
| On-resistance (RDS(ON))| 1700mΩ @ VGS=10V |
| Continuous drain current (ID)| 2A |
| Technology| Planar|
Domain and module applications：
### Applications and Module Examples
**Applications:**
1. **Power Management:**
2SK1572-VB can be used in high voltage power management systems such as DC-DC converters and AC-DC power adapters. Its high drain-source voltage capability and low on-resistance ensure power conversion efficiency and reliability.
2. **Lighting Control:**
This MOSFET is ideal for use in LED lighting control circuits. Its high voltage and current handling capabilities enable it to excel in driving high-power LEDs and can effectively reduce power losses.
3. **Industrial Control:**
In industrial automation and control systems, 2SK1572-VB can be used in motor drive and protection circuits. Its high withstand voltage characteristics and stable current handling capabilities enable it to operate reliably for a long time in harsh environments.
**Module Examples: **
1. **High-voltage switch module: **
2SK1572-VB can be integrated into high-voltage switch modules for switching and controlling high-voltage circuits. Its 650V drain-source voltage and low on-resistance ensure high efficiency and low losses of the module.
2. **Power amplifier module: **
In audio and RF power amplifier applications, this MOSFET can be used as part of a power amplifier. Its stable performance and high current handling capability ensure high-fidelity amplification of the signal.
3. **Protection circuit module: **
This type of MOSFET can also be used to design over-current and over-voltage protection circuits. Its fast response and high reliability enable it to effectively protect other key components from damage caused by electrical faults.
Through these application areas and module examples, it can be seen that the wide applicability and high-performance characteristics of 2SK1572-VB make it an ideal choice for high-voltage, high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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