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VBP17R07 Product details

Product introduction:

Product Introduction: VBsemi's VBP17R07 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V (Vth). Using Plannar technology, packaged as TO247.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 700V 30(±V) 3.5V 7A 1400 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1400m次
- Maximum drain current (ID): 7A

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial motor driver: VBP17R07 has a high drain-source voltage and moderate drain current, and is suitable for designing industrial motor drivers, such as fans, pumps, etc.
2. Solar inverter: In solar power generation systems, power MOSFETs that handle high voltage and current are required. VBP17R07 can be used to design the power switching circuit of solar inverters.
3. Industrial automation control system: Because VBP17R07 has high voltage and current tolerance, it can be used to design power switch modules in industrial automation control systems, such as motor control, electric furnace control, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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